HM2302BKR mosfet equivalent, n-channel enhancement mode power mosfet.
* RDS(ON)= 270 mΩ @VGS=4.5V
* RDS(ON)= 330 mΩ @VGS=2.5V
* RDS(ON)= 450 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Excep.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
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FEATU.
The HM2302BKR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS
* Po.
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